Vishay Semiconductor Diodes Division - BYV28-100-TAP

KEY Part #: K6454633

BYV28-100-TAP Pricing (USD) [208752PC Stock]

  • 1 pcs$0.17807
  • 12,500 pcs$0.17718

Nimewo Pati:
BYV28-100-TAP
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 100V 3.5A SOD64. Rectifiers 3.5 Amp 100 Volt 90 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYV28-100-TAP electronic components. BYV28-100-TAP can be shipped within 24 hours after order. If you have any demands for BYV28-100-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYV28-100-TAP Atribi pwodwi yo

Nimewo Pati : BYV28-100-TAP
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 100V 3.5A SOD64
Seri : -
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 3.5A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 5A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 30ns
Kouran - Fèy Reverse @ Vr : 1µA @ 100V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : SOD-64, Axial
Pake Aparèy Founisè : SOD-64
Operating Tanperati - Junction : -55°C ~ 175°C

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