TPN22006NH,LQ Pricing (USD) [293170PC Stock]
- 1 pcs$0.13947
- 3,000 pcs$0.13878
- Nimewo Pati:
- TPN22006NH,LQ
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N CH 60V 9A 8-TSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Tiristors - SCR, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPN22006NH,LQ electronic components. TPN22006NH,LQ can be shipped within 24 hours after order. If you have any demands for TPN22006NH,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN22006NH,LQ Atribi pwodwi yo
Nimewo Pati :
TPN22006NH,LQ
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N CH 60V 9A 8-TSON
Seri :
U-MOSVIII-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6.5V, 10V
RD sou (Max) @ Id, Vgs :
22 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
710pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
700mW (Ta), 18W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-TSON Advance (3.3x3.3)
Pake / Ka :
8-PowerVDFN
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