Toshiba Semiconductor and Storage - TK20S06K3L(T6L1,NQ

KEY Part #: K6420402

TK20S06K3L(T6L1,NQ Pricing (USD) [190859PC Stock]

  • 1 pcs$0.21424
  • 2,000 pcs$0.21317

Nimewo Pati:
TK20S06K3L(T6L1,NQ
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 60V 20A DPAK-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK20S06K3L(T6L1,NQ electronic components. TK20S06K3L(T6L1,NQ can be shipped within 24 hours after order. If you have any demands for TK20S06K3L(T6L1,NQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK20S06K3L(T6L1,NQ Atribi pwodwi yo

Nimewo Pati : TK20S06K3L(T6L1,NQ
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 60V 20A DPAK-3
Seri : U-MOSIV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 29 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 780pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 38W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK+
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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