NXP USA Inc. - A2T18S262W12NR3

KEY Part #: K6466094

A2T18S262W12NR3 Pricing (USD) [1381PC Stock]

  • 1 pcs$31.35403

Nimewo Pati:
A2T18S262W12NR3
Manifakti:
NXP USA Inc.
Detaye deskripsyon:
AIRFAST RF POWER LDMOS TRANSISTO.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in NXP USA Inc. A2T18S262W12NR3 electronic components. A2T18S262W12NR3 can be shipped within 24 hours after order. If you have any demands for A2T18S262W12NR3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

A2T18S262W12NR3 Atribi pwodwi yo

Nimewo Pati : A2T18S262W12NR3
Manifakti : NXP USA Inc.
Deskripsyon : AIRFAST RF POWER LDMOS TRANSISTO
Seri : -
Estati Pati : Active
Kalite tranzistò : LDMOS
Frekans : 1.805GHz ~ 1.88GHz
Akeri : 19.3dB
Voltage - Test : 28V
Kouran Rating : 10µA
Bwi figi : -
Kouran - Tès : 1.6A
Pouvwa - Sòti : 231W
Voltage - Rated : 65V
Pake / Ka : OM-880X-2L2L
Pake Aparèy Founisè : OM-880X-2L2L