Nimewo Pati :
IPG20N06S3L-23
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 55V 20A TDSON-8
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A
RD sou (Max) @ Id, Vgs :
23 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 20µA
Chaje Gate (Qg) (Max) @ Vgs :
42nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2950pF @ 25V
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TDSON-8-4