IXTA1N170DHV Pricing (USD) [8166PC Stock]
- 1 pcs$5.04672
- 50 pcs$4.09437
- Nimewo Pati:
- IXTA1N170DHV
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1700V 1A TO-263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXTA1N170DHV electronic components. IXTA1N170DHV can be shipped within 24 hours after order. If you have any demands for IXTA1N170DHV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA1N170DHV Atribi pwodwi yo
Nimewo Pati :
IXTA1N170DHV
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1700V 1A TO-263
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
16 Ohm @ 500mA, 0V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
47nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3090pF @ 25V
Karakteristik FET :
Depletion Mode
Disipasyon Pouvwa (Max) :
290W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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