Infineon Technologies - AUIRFR120Z

KEY Part #: K6420060

AUIRFR120Z Pricing (USD) [156275PC Stock]

  • 1 pcs$0.23668

Nimewo Pati:
AUIRFR120Z
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 8.7A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Tiristors - TRIACs, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Infineon Technologies AUIRFR120Z electronic components. AUIRFR120Z can be shipped within 24 hours after order. If you have any demands for AUIRFR120Z, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AUIRFR120Z Atribi pwodwi yo

Nimewo Pati : AUIRFR120Z
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 8.7A DPAK
Seri : HEXFET®
Estati Pati : Last Time Buy
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 190 mOhm @ 5.2A, 10V
Vgs (th) (Max) @ Id : 4V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 310pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 35W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D-Pak
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63