IGW25N120H3FKSA1 Pricing (USD) [15157PC Stock]
- 1 pcs$2.71912
- Nimewo Pati:
- IGW25N120H3FKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 1200V 50A 326W TO247-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IGW25N120H3FKSA1 electronic components. IGW25N120H3FKSA1 can be shipped within 24 hours after order. If you have any demands for IGW25N120H3FKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IGW25N120H3FKSA1 Atribi pwodwi yo
Nimewo Pati :
IGW25N120H3FKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 1200V 50A 326W TO247-3
Seri :
TrenchStop®
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
50A
Kouran - Pèseptè batman (Icm) :
100A
Vce (sou) (Max) @ Vge, Ic :
2.4V @ 15V, 25A
Pouvwa - Max :
326W
Oblije chanje enèji :
2.65mJ
Kalite Antre :
Standard
Gate chaje :
115nC
Td (on / off) @ 25 ° C :
27ns/277ns
Kondisyon egzamen an :
600V, 25A, 23 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
PG-TO247-3
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