Global Power Technologies Group - GP2M004A060HG

KEY Part #: K6402659

[2628PC Stock]


    Nimewo Pati:
    GP2M004A060HG
    Manifakti:
    Global Power Technologies Group
    Detaye deskripsyon:
    MOSFET N-CH 600V 4A TO220.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Zener - Single ...
    Avantaj konpetitif:
    We specialize in Global Power Technologies Group GP2M004A060HG electronic components. GP2M004A060HG can be shipped within 24 hours after order. If you have any demands for GP2M004A060HG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GP2M004A060HG Atribi pwodwi yo

    Nimewo Pati : GP2M004A060HG
    Manifakti : Global Power Technologies Group
    Deskripsyon : MOSFET N-CH 600V 4A TO220
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 600V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 2.5 Ohm @ 2A, 10V
    Vgs (th) (Max) @ Id : 5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 545pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 86.2W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220
    Pake / Ka : TO-220-3

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