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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. SSU1N60BTU-WS

ON Semiconductor - SSU1N60BTU-WS

KEY Part #: K6421235

SSU1N60BTU-WS Pricing (USD) [401378PC Stock]

  • 1 pcs$0.09215
Nimewo Pati:
SSU1N60BTU-WS
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 600V 0.9A IPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Tiristors - SCR, Transistors - FETs, MOSFETs - RF and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in ON Semiconductor SSU1N60BTU-WS electronic components. SSU1N60BTU-WS can be shipped within 24 hours after order. If you have any demands for SSU1N60BTU-WS, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSU1N60BTU-WS Atribi pwodwi yo

Nimewo Pati : SSU1N60BTU-WS
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 600V 0.9A IPAK
Seri : -
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 900mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 12 Ohm @ 450mA, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 7.7nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 215pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 28W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : I-PAK
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

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