[846PC Stock]
- Nimewo Pati:
- SI4448DY-T1-E3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 12V 50A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Tiristors - SCR, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI4448DY-T1-E3 electronic components. SI4448DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4448DY-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4448DY-T1-E3 Atribi pwodwi yo
Nimewo Pati :
SI4448DY-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 12V 50A 8-SOIC
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
1.7 mOhm @ 20A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
150nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
12350pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.5W (Ta), 7.8W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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