Vishay Siliconix - SI3983DV-T1-GE3

KEY Part #: K6524054

[3960PC Stock]


    Nimewo Pati:
    SI3983DV-T1-GE3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET 2P-CH 20V 2.1A 6-TSOP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur and Diodes - Zener - Arrays ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SI3983DV-T1-GE3 electronic components. SI3983DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3983DV-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI3983DV-T1-GE3 Atribi pwodwi yo

    Nimewo Pati : SI3983DV-T1-GE3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET 2P-CH 20V 2.1A 6-TSOP
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : 2 P-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.1A
    RD sou (Max) @ Id, Vgs : 110 mOhm @ 2.5A, 4.5V
    Vgs (th) (Max) @ Id : 1.1V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 7.5nC @ 4.5V
    Antre kapasite (Ciss) (Max) @ Vds : -
    Pouvwa - Max : 830mW
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : SOT-23-6 Thin, TSOT-23-6
    Pake Aparèy Founisè : 6-TSOP