Microsemi Corporation - APTM10UM01FAG

KEY Part #: K6397776

APTM10UM01FAG Pricing (USD) [487PC Stock]

  • 1 pcs$95.20883
  • 10 pcs$90.61072
  • 25 pcs$87.32781

Nimewo Pati:
APTM10UM01FAG
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 100V 860A SP6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APTM10UM01FAG electronic components. APTM10UM01FAG can be shipped within 24 hours after order. If you have any demands for APTM10UM01FAG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM10UM01FAG Atribi pwodwi yo

Nimewo Pati : APTM10UM01FAG
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 100V 860A SP6
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 860A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.6 mOhm @ 275A, 10V
Vgs (th) (Max) @ Id : 4V @ 12mA
Chaje Gate (Qg) (Max) @ Vgs : 2100nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 60000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2500W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SP6
Pake / Ka : SP6

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