Samsung Semiconductor - K4B2G1646F-BYNB

KEY Part #: K7359666

[19090PC Stock]


    Nimewo Pati:
    K4B2G1646F-BYNB
    Manifakti:
    Samsung Semiconductor
    Detaye deskripsyon:
    2 Gb 128M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: GDDR6, HBM Flarebolt, SLC Nand, LPDDR4, LPDDR3, DDR3, GDDR5 and LPDDR4X ...
    Avantaj konpetitif:
    We specialize in Samsung Semiconductor K4B2G1646F-BYNB electronic components. K4B2G1646F-BYNB can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BYNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BYNB Atribi pwodwi yo

    Nimewo Pati : K4B2G1646F-BYNB
    Manifakti : Samsung Semiconductor
    Deskripsyon : 2 Gb 128M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Seri : DDR3
    dansite : 2 Gb
    Org. : 128M x 16
    vitès : 2133 Mbps
    Voltage : 1.35 V
    Tanperatur. : 0 ~ 85 °C
    Pake : 96FBGA
    pwodwi dènye nouvèl : Mass Production

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