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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APTM10DAM02G

Microsemi Corporation - APTM10DAM02G

KEY Part #: K6396554

APTM10DAM02G Pricing (USD) [830PC Stock]

  • 1 pcs$56.18899
  • 100 pcs$55.90944
Nimewo Pati:
APTM10DAM02G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 100V 495A SP6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - JFETs, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APTM10DAM02G electronic components. APTM10DAM02G can be shipped within 24 hours after order. If you have any demands for APTM10DAM02G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM10DAM02G Atribi pwodwi yo

Nimewo Pati : APTM10DAM02G
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 100V 495A SP6
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 495A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.5 mOhm @ 200A, 10V
Vgs (th) (Max) @ Id : 4V @ 10mA
Chaje Gate (Qg) (Max) @ Vgs : 1360nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 40000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1250W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SP6
Pake / Ka : SP6

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