Infineon Technologies - IRLZ24NSTRLPBF

KEY Part #: K6399296

IRLZ24NSTRLPBF Pricing (USD) [115972PC Stock]

  • 1 pcs$0.31893
  • 800 pcs$0.27732

Nimewo Pati:
IRLZ24NSTRLPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 55V 18A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRLZ24NSTRLPBF electronic components. IRLZ24NSTRLPBF can be shipped within 24 hours after order. If you have any demands for IRLZ24NSTRLPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLZ24NSTRLPBF Atribi pwodwi yo

Nimewo Pati : IRLZ24NSTRLPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 55V 18A D2PAK
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 60 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 5V
Vgs (Max) : ±16V
Antre kapasite (Ciss) (Max) @ Vds : 480pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.8W (Ta), 45W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB