Infineon Technologies - BCR192WE6327HTSA1

KEY Part #: K6528115

[2605PC Stock]


    Nimewo Pati:
    BCR192WE6327HTSA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    TRANS PREBIAS PNP 250MW SOT323-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies BCR192WE6327HTSA1 electronic components. BCR192WE6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BCR192WE6327HTSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BCR192WE6327HTSA1 Atribi pwodwi yo

    Nimewo Pati : BCR192WE6327HTSA1
    Manifakti : Infineon Technologies
    Deskripsyon : TRANS PREBIAS PNP 250MW SOT323-3
    Seri : -
    Estati Pati : Obsolete
    Kalite tranzistò : PNP - Pre-Biased
    Kouran - Pèseptè (Ic) (Max) : 100mA
    Voltage - Pèseptè ki emèt deba (Max) : 50V
    Rezistans - Sèvi (R1) : 22 kOhms
    Rezistans - Sèvi ak emeteur (R2) : 47 kOhms
    DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 70 @ 5mA, 5V
    Vce saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
    Kouran - Cutoff Pèseptè (Max) : 100nA (ICBO)
    Frekans - Tranzisyon : 200MHz
    Pouvwa - Max : 250mW
    Mounting Kalite : Surface Mount
    Pake / Ka : SC-70, SOT-323
    Pake Aparèy Founisè : PG-SOT323-3

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