Manifakti :
Infineon Technologies
Deskripsyon :
IC MOSFET DRVR CURR SENSE 8DIP
Kondwi konte genyen :
High-Side or Low-Side
Kalite Gate :
IGBT, N-Channel MOSFET
Voltage - Pwovizyon pou :
12V ~ 20V
Vòltaj lojik - VIL, VIH :
0.8V, 3V
Kouran - Peak Sòti (Sous, Lavabo) :
250mA, 500mA
Segondè Voltage Side - Max (Bootstrap) :
600V
Rise / Fall Time (Tip) :
80ns, 40ns
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
8-DIP (0.300", 7.62mm)
Pake Aparèy Founisè :
8-PDIP