Vishay Semiconductor Diodes Division - SS1H10HE3_B/I

KEY Part #: K6455049

SS1H10HE3_B/I Pricing (USD) [729723PC Stock]

  • 1 pcs$0.05069

Nimewo Pati:
SS1H10HE3_B/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 100V 1A SMA. Schottky Diodes & Rectifiers 1A 100V H. Barrier Sky Rect.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction, Tiristors - DIACs, SIDACs and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division SS1H10HE3_B/I electronic components. SS1H10HE3_B/I can be shipped within 24 hours after order. If you have any demands for SS1H10HE3_B/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SS1H10HE3_B/I Atribi pwodwi yo

Nimewo Pati : SS1H10HE3_B/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 100V 1A SMA
Seri : Automotive, AEC-Q100
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 860mV @ 2A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 1µA @ 100V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AC, SMA
Pake Aparèy Founisè : SMA (DO-214AC)
Operating Tanperati - Junction : 175°C (Max)

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