[840PC Stock]
- Nimewo Pati:
- SI7882DP-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 12V 13A PPAK SO-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI7882DP-T1-GE3 electronic components. SI7882DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7882DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7882DP-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI7882DP-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 12V 13A PPAK SO-8
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
13A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
5.5 mOhm @ 17A, 4.5V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
30nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.9W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® SO-8
Pake / Ka :
PowerPAK® SO-8
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