Vishay Semiconductor Diodes Division - VS-40MT120UHTAPBF

KEY Part #: K6532862

VS-40MT120UHTAPBF Pricing (USD) [996PC Stock]

  • 1 pcs$46.59484
  • 105 pcs$44.26510

Nimewo Pati:
VS-40MT120UHTAPBF
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
IGBT 1200V 80A 463W MTP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-40MT120UHTAPBF electronic components. VS-40MT120UHTAPBF can be shipped within 24 hours after order. If you have any demands for VS-40MT120UHTAPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-40MT120UHTAPBF Atribi pwodwi yo

Nimewo Pati : VS-40MT120UHTAPBF
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : IGBT 1200V 80A 463W MTP
Seri : -
Estati Pati : Active
Kalite IGBT : NPT
Nou konte genyen : Half Bridge
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 80A
Pouvwa - Max : 463W
Vce (sou) (Max) @ Vge, Ic : 4.91V @ 15V, 80A
Kouran - Cutoff Pèseptè (Max) : 250µA
Antre kapasite (Cies) @ Vce : 8.28nF @ 30V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : 12-MTP Module
Pake Aparèy Founisè : MTP

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