[12733PC Stock]
- Nimewo Pati:
- IRF610L
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 200V 3.3A TO-262.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Diodes - RF, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRF610L electronic components. IRF610L can be shipped within 24 hours after order. If you have any demands for IRF610L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF610L Atribi pwodwi yo
Nimewo Pati :
IRF610L
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 200V 3.3A TO-262
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.5 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.2nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
140pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3W (Ta), 36W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-262
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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