[2192PC Stock]
- Nimewo Pati:
- RJK2006DPE-00#J3
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET N-CH 200V 40A LDPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Tiristors - TRIACs, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America RJK2006DPE-00#J3 electronic components. RJK2006DPE-00#J3 can be shipped within 24 hours after order. If you have any demands for RJK2006DPE-00#J3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJK2006DPE-00#J3 Atribi pwodwi yo
Nimewo Pati :
RJK2006DPE-00#J3
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET N-CH 200V 40A LDPAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
40A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
59 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
43nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
100W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
4-LDPAK
Pake / Ka :
SC-83
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