IRF5210LPBF Pricing (USD) [31809PC Stock]
- 1 pcs$1.24277
- 10 pcs$1.06490
- 100 pcs$0.85556
- 500 pcs$0.66545
- 1,000 pcs$0.55137
- Nimewo Pati:
- IRF5210LPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 100V 38A TO-262.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - RF, Tiristors - SCR, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF5210LPBF electronic components. IRF5210LPBF can be shipped within 24 hours after order. If you have any demands for IRF5210LPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF5210LPBF Atribi pwodwi yo
Nimewo Pati :
IRF5210LPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 100V 38A TO-262
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
38A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
60 mOhm @ 38A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
230nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2780pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.1W (Ta), 170W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-262
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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