NGTB30N120FL2WG Pricing (USD) [9937PC Stock]
- 1 pcs$4.14699
- 90 pcs$3.39873
- Nimewo Pati:
- NGTB30N120FL2WG
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 1200V 60A 452W TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Diodes - RF, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NGTB30N120FL2WG electronic components. NGTB30N120FL2WG can be shipped within 24 hours after order. If you have any demands for NGTB30N120FL2WG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NGTB30N120FL2WG Atribi pwodwi yo
Nimewo Pati :
NGTB30N120FL2WG
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 1200V 60A 452W TO247
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
60A
Kouran - Pèseptè batman (Icm) :
120A
Vce (sou) (Max) @ Vge, Ic :
2.3V @ 15V, 30A
Pouvwa - Max :
452W
Oblije chanje enèji :
2.6mJ (on), 700µJ (off)
Kalite Antre :
Standard
Gate chaje :
220nC
Td (on / off) @ 25 ° C :
98ns/210ns
Kondisyon egzamen an :
600V, 30A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
240ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247
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