IRLU3636PBF Pricing (USD) [101987PC Stock]
- 1 pcs$0.38339
- Nimewo Pati:
- IRLU3636PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 60V 50A IPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRLU3636PBF electronic components. IRLU3636PBF can be shipped within 24 hours after order. If you have any demands for IRLU3636PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLU3636PBF Atribi pwodwi yo
Nimewo Pati :
IRLU3636PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 60V 50A IPAK
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6.8 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
49nC @ 4.5V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
3779pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
143W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I-PAK
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
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