Vishay Semiconductor Diodes Division - 1N5256B-TAP

KEY Part #: K6517075

1N5256B-TAP Pricing (USD) [3711167PC Stock]

  • 1 pcs$0.00997
  • 30,000 pcs$0.00854

Nimewo Pati:
1N5256B-TAP
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE ZENER 4.2A 30V DO35. Zener Diodes 30 Volt 0.5W 5%
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division 1N5256B-TAP electronic components. 1N5256B-TAP can be shipped within 24 hours after order. If you have any demands for 1N5256B-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5256B-TAP Atribi pwodwi yo

Nimewo Pati : 1N5256B-TAP
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE ZENER 4.2A 30V DO35
Seri : Automotive, AEC-Q101
Estati Pati : Active
Voltage - Zener (Nom) (Vz) : 30V
Tolerans : ±5%
Pouvwa - Max : 500mW
Enpedans (Max) (Zzt) : 49 Ohms
Kouran - Fèy Reverse @ Vr : 100nA @ 23V
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 200mA
Operating Tanperati : -65°C ~ 175°C
Mounting Kalite : Through Hole
Pake / Ka : DO-204AH, DO-35, Axial
Pake Aparèy Founisè : DO-35

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