Vishay Siliconix - SI4896DY-T1-GE3

KEY Part #: K6419473

SI4896DY-T1-GE3 Pricing (USD) [113709PC Stock]

  • 1 pcs$0.32528
  • 2,500 pcs$0.28444

Nimewo Pati:
SI4896DY-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 80V 6.7A 8SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI4896DY-T1-GE3 electronic components. SI4896DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4896DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4896DY-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI4896DY-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 80V 6.7A 8SOIC
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 16.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs : 41nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.56W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SO
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

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