Renesas Electronics America - UPA2820T1S-E2-AT

KEY Part #: K6393961

UPA2820T1S-E2-AT Pricing (USD) [203351PC Stock]

  • 1 pcs$0.19103
  • 5,000 pcs$0.19008

Nimewo Pati:
UPA2820T1S-E2-AT
Manifakti:
Renesas Electronics America
Detaye deskripsyon:
MOSFET N-CH 30V 8HVSON.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Diodes - RF, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in Renesas Electronics America UPA2820T1S-E2-AT electronic components. UPA2820T1S-E2-AT can be shipped within 24 hours after order. If you have any demands for UPA2820T1S-E2-AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UPA2820T1S-E2-AT Atribi pwodwi yo

Nimewo Pati : UPA2820T1S-E2-AT
Manifakti : Renesas Electronics America
Deskripsyon : MOSFET N-CH 30V 8HVSON
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 5.3 mOhm @ 22A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2330pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.5W (Ta), 16W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : -
Pake / Ka : 8-PowerWDFN