Infineon Technologies - IPB80N06S407ATMA2

KEY Part #: K6419806

IPB80N06S407ATMA2 Pricing (USD) [134087PC Stock]

  • 1 pcs$0.27585
  • 1,000 pcs$0.25307

Nimewo Pati:
IPB80N06S407ATMA2
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 60V 80A TO263-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB80N06S407ATMA2 Atribi pwodwi yo

Nimewo Pati : IPB80N06S407ATMA2
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 60V 80A TO263-3
Seri : Automotive, AEC-Q101, OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : -
Vgs (th) (Max) @ Id : 4V @ 40µA
Chaje Gate (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 79W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TO263-3-2
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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