Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2P-CH 12V 7.8A 8-SOIC
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.8A
RD sou (Max) @ Id, Vgs :
24 mOhm @ 7.8A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
33nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
2020pF @ 10V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO