Nexperia USA Inc. - PMT200EPEX

KEY Part #: K6421193

PMT200EPEX Pricing (USD) [384703PC Stock]

  • 1 pcs$0.09615

Nimewo Pati:
PMT200EPEX
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
PMT200EPE/SOT223/SC-73.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Rèkteur - Arrays, Transistors - JFETs, Diodes - RF, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PMT200EPEX electronic components. PMT200EPEX can be shipped within 24 hours after order. If you have any demands for PMT200EPEX, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMT200EPEX Atribi pwodwi yo

Nimewo Pati : PMT200EPEX
Manifakti : Nexperia USA Inc.
Deskripsyon : PMT200EPE/SOT223/SC-73
Seri : TrenchMOS™
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 70V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 167 mOhm @ 2.4A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 15.9nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 822pF @ 35V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 800mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SC-73
Pake / Ka : TO-261-4, TO-261AA

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