Infineon Technologies - IPP80N04S404AKSA1

KEY Part #: K6419459

IPP80N04S404AKSA1 Pricing (USD) [113338PC Stock]

  • 1 pcs$0.32634
  • 500 pcs$0.25740

Nimewo Pati:
IPP80N04S404AKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 40V 80A TO220-3-1.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo and Diodes - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP80N04S404AKSA1 Atribi pwodwi yo

Nimewo Pati : IPP80N04S404AKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 40V 80A TO220-3-1
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 4.6 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 4V @ 35µA
Chaje Gate (Qg) (Max) @ Vgs : 43nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3440pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 71W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-3-1
Pake / Ka : TO-220-3