Nimewo Pati :
SI5511DC-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 30V 4A 1206-8
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A, 3.6A
RD sou (Max) @ Id, Vgs :
55 mOhm @ 4.8A, 4.5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.1nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
435pF @ 15V
Pouvwa - Max :
3.1W, 2.6W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SMD, Flat Lead
Pake Aparèy Founisè :
1206-8 ChipFET™