Vishay Siliconix - SI5511DC-T1-E3

KEY Part #: K6524412

[3841PC Stock]


    Nimewo Pati:
    SI5511DC-T1-E3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N/P-CH 30V 4A 1206-8.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur and Tiristors - DIACs, SIDACs ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SI5511DC-T1-E3 electronic components. SI5511DC-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5511DC-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI5511DC-T1-E3 Atribi pwodwi yo

    Nimewo Pati : SI5511DC-T1-E3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N/P-CH 30V 4A 1206-8
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : N and P-Channel
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A, 3.6A
    RD sou (Max) @ Id, Vgs : 55 mOhm @ 4.8A, 4.5V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 7.1nC @ 5V
    Antre kapasite (Ciss) (Max) @ Vds : 435pF @ 15V
    Pouvwa - Max : 3.1W, 2.6W
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-SMD, Flat Lead
    Pake Aparèy Founisè : 1206-8 ChipFET™