Nimewo Pati :
DSE010-TR-E
Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 80V 100MA
Voltage - DC Ranvèse (Vr) (Max) :
80V
Kouran - Mwayèn Rèktifye (Io) :
100mA
Voltage - Forward (Vf) (Max) @ Si :
1.2V @ 100mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
4ns
Kouran - Fèy Reverse @ Vr :
500nA @ 80V
Kapasite @ Vr, F :
3pF @ 0.5V, 1MHz
Operating Tanperati - Junction :
-55°C ~ 125°C