IXFP4N85X Pricing (USD) [33399PC Stock]
- 1 pcs$1.35736
- 10 pcs$1.21192
- 100 pcs$0.94282
- 500 pcs$0.76345
- 1,000 pcs$0.64387
- Nimewo Pati:
- IXFP4N85X
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 850V 3.5A TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Diodes - Zener - Single, Tiristors - SCR, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXFP4N85X electronic components. IXFP4N85X can be shipped within 24 hours after order. If you have any demands for IXFP4N85X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP4N85X Atribi pwodwi yo
Nimewo Pati :
IXFP4N85X
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 850V 3.5A TO220AB
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
850V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.5 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
247pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB (IXFP)
Pake / Ka :
TO-220-3
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