Sanken - SKI10123

KEY Part #: K6393480

SKI10123 Pricing (USD) [121455PC Stock]

  • 1 pcs$0.32464
  • 4,000 pcs$0.32302

Nimewo Pati:
SKI10123
Manifakti:
Sanken
Detaye deskripsyon:
MOSFET N-CH 100V 66A TO-263.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Sanken SKI10123 electronic components. SKI10123 can be shipped within 24 hours after order. If you have any demands for SKI10123, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SKI10123 Atribi pwodwi yo

Nimewo Pati : SKI10123
Manifakti : Sanken
Deskripsyon : MOSFET N-CH 100V 66A TO-263
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 66A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 11.6 mOhm @ 33A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs : 88.8nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 6420pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 135W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB