[867PC Stock]
- Nimewo Pati:
- TPCA8105(TE12L,Q,M
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET P-CH 12V 6A SOP-8 ADV.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Zener - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPCA8105(TE12L,Q,M electronic components. TPCA8105(TE12L,Q,M can be shipped within 24 hours after order. If you have any demands for TPCA8105(TE12L,Q,M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPCA8105(TE12L,Q,M Atribi pwodwi yo
Nimewo Pati :
TPCA8105(TE12L,Q,M
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 12V 6A SOP-8 ADV
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
33 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs :
18nC @ 5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
1600pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.6W (Ta), 20W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP Advance (5x5)
Pake / Ka :
8-PowerVDFN
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