Toshiba Semiconductor and Storage - TK13E25D,S1X(S

KEY Part #: K6418058

TK13E25D,S1X(S Pricing (USD) [50552PC Stock]

  • 1 pcs$0.85509
  • 50 pcs$0.85083

Nimewo Pati:
TK13E25D,S1X(S
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 250V 13A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Tiristors - SCR and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK13E25D,S1X(S electronic components. TK13E25D,S1X(S can be shipped within 24 hours after order. If you have any demands for TK13E25D,S1X(S, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK13E25D,S1X(S Atribi pwodwi yo

Nimewo Pati : TK13E25D,S1X(S
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 250V 13A TO-220AB
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 250 mOhm @ 6.5A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1100pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 102W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3