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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FCP850N80Z

ON Semiconductor - FCP850N80Z

KEY Part #: K6418638

FCP850N80Z Pricing (USD) [71431PC Stock]

  • 1 pcs$0.73000
  • 800 pcs$0.72637
Nimewo Pati:
FCP850N80Z
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 800V 8A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FCP850N80Z electronic components. FCP850N80Z can be shipped within 24 hours after order. If you have any demands for FCP850N80Z, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCP850N80Z Atribi pwodwi yo

Nimewo Pati : FCP850N80Z
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 800V 8A
Seri : SuperFET® II
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 850 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 600µA
Chaje Gate (Qg) (Max) @ Vgs : 29nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1315pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 136W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3

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