[1992PC Stock]
- Nimewo Pati:
- IRF1902GTRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 20V 4.2A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF1902GTRPBF electronic components. IRF1902GTRPBF can be shipped within 24 hours after order. If you have any demands for IRF1902GTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF1902GTRPBF Atribi pwodwi yo
Nimewo Pati :
IRF1902GTRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 20V 4.2A 8SOIC
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
85 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id :
700mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.5nC @ 4.5V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
310pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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