[3957PC Stock]
- Nimewo Pati:
- SI3529DV-T1-E3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N/P-CH 40V 2.5A 6-TSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI3529DV-T1-E3 electronic components. SI3529DV-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI3529DV-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3529DV-T1-E3 Atribi pwodwi yo
Nimewo Pati :
SI3529DV-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 40V 2.5A 6-TSOP
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.5A, 1.95A
RD sou (Max) @ Id, Vgs :
125 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
205pF @ 20V
Pouvwa - Max :
1.4W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
6-TSOP
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