IXYS - IXTP3N50D2

KEY Part #: K6397218

IXTP3N50D2 Pricing (USD) [32137PC Stock]

  • 1 pcs$1.41465
  • 10 pcs$1.27583
  • 100 pcs$0.97271
  • 500 pcs$0.75655
  • 1,000 pcs$0.62686

Nimewo Pati:
IXTP3N50D2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 3A TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in IXYS IXTP3N50D2 electronic components. IXTP3N50D2 can be shipped within 24 hours after order. If you have any demands for IXTP3N50D2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP3N50D2 Atribi pwodwi yo

Nimewo Pati : IXTP3N50D2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 3A TO220AB
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 1.5 Ohm @ 1.5A, 0V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 40nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1070pF @ 25V
Karakteristik FET : Depletion Mode
Disipasyon Pouvwa (Max) : 125W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3