Infineon Technologies - BSF134N10NJ3GXUMA1

KEY Part #: K6419527

BSF134N10NJ3GXUMA1 Pricing (USD) [116513PC Stock]

  • 1 pcs$0.31745

Nimewo Pati:
BSF134N10NJ3GXUMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 9A WDSON-2.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSF134N10NJ3GXUMA1 Atribi pwodwi yo

Nimewo Pati : BSF134N10NJ3GXUMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 9A WDSON-2
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Ta), 40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 13.4 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 40µA
Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2300pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.2W (Ta), 43W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : MG-WDSON-2, CanPAK M™
Pake / Ka : 3-WDSON