Vishay Semiconductor Diodes Division - BYT56M-TAP

KEY Part #: K6453153

BYT56M-TAP Pricing (USD) [242912PC Stock]

  • 1 pcs$0.15303
  • 12,500 pcs$0.15227

Nimewo Pati:
BYT56M-TAP
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 1KV 3A SOD64. Rectifiers 1000 Volt 3.0 Amp 80 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Tiristors - TRIACs, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYT56M-TAP electronic components. BYT56M-TAP can be shipped within 24 hours after order. If you have any demands for BYT56M-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYT56M-TAP Atribi pwodwi yo

Nimewo Pati : BYT56M-TAP
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 1KV 3A SOD64
Seri : -
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 1000V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.4V @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 100ns
Kouran - Fèy Reverse @ Vr : 5µA @ 1000V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : SOD-64, Axial
Pake Aparèy Founisè : SOD-64
Operating Tanperati - Junction : -55°C ~ 175°C

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