Diodes Incorporated - DMN2028UFU-13

KEY Part #: K6522471

DMN2028UFU-13 Pricing (USD) [627702PC Stock]

  • 1 pcs$0.05893
  • 10,000 pcs$0.05236

Nimewo Pati:
DMN2028UFU-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET 2N-CH 20V 7.9A UDFN2020-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Tiristors - SCR, Transistors - JFETs, Diodes - RF, Transistors - FETs, MOSFETs - RF and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN2028UFU-13 electronic components. DMN2028UFU-13 can be shipped within 24 hours after order. If you have any demands for DMN2028UFU-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2028UFU-13 Atribi pwodwi yo

Nimewo Pati : DMN2028UFU-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET 2N-CH 20V 7.9A UDFN2020-6
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Common Drain
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.5A
RD sou (Max) @ Id, Vgs : 20.2 mOhm @ 4.5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 18.4nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds : 887pF @ 10V
Pouvwa - Max : 900mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-UFDFN Exposed Pad
Pake Aparèy Founisè : U-DFN2030-6 (Type B)

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