[2193PC Stock]
- Nimewo Pati:
- JANTX2N6796U
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET N-CH 100V 8A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation JANTX2N6796U electronic components. JANTX2N6796U can be shipped within 24 hours after order. If you have any demands for JANTX2N6796U, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JANTX2N6796U Atribi pwodwi yo
Nimewo Pati :
JANTX2N6796U
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET N-CH 100V 8A
Seri :
Military, MIL-PRF-19500/557
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
195 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
28.51nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
800mW (Ta), 25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
18-ULCC (9.14x7.49)
Pake / Ka :
18-CLCC
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