Vishay Semiconductor Diodes Division - RGP10D-E3/53

KEY Part #: K6457891

RGP10D-E3/53 Pricing (USD) [735693PC Stock]

  • 1 pcs$0.05116
  • 12,000 pcs$0.05090

Nimewo Pati:
RGP10D-E3/53
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 1A DO204AL. Diodes - General Purpose, Power, Switching 1.0A 200 Volt 150ns Trim Leads
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Tiristors - TRIACs and Diodes - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division RGP10D-E3/53 electronic components. RGP10D-E3/53 can be shipped within 24 hours after order. If you have any demands for RGP10D-E3/53, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGP10D-E3/53 Atribi pwodwi yo

Nimewo Pati : RGP10D-E3/53
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 1A DO204AL
Seri : Automotive, AEC-Q101, Superectifier®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 150ns
Kouran - Fèy Reverse @ Vr : 5µA @ 200V
Kapasite @ Vr, F : 15pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : DO-204AL, DO-41, Axial
Pake Aparèy Founisè : DO-204AL (DO-41)
Operating Tanperati - Junction : -65°C ~ 175°C

Ou ka enterese tou
  • EGL34A-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 500MA DO213AA. Rectifiers 0.5 Amp 50 Volt 50ns

  • BYM07-100-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 500MA DO213. Rectifiers 100 Volt 0.5A 50ns Glass Passivated

  • EGL34F-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 300V 500MA DO213. Rectifiers 0.5Amp 300 Volt 50ns

  • BYM07-200-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 500MA DO213. Rectifiers 200 Volt 0.5A 50ns Glass Passivated

  • BYM07-50-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 500MA DO213AA. Rectifiers 50 Volt 0.5A 50ns Glass Passivated

  • EGL34C-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 500MA DO213. Rectifiers 0.5Amp 150 Volt 50ns