IXYS - IXTK200N10P

KEY Part #: K6395500

IXTK200N10P Pricing (USD) [9347PC Stock]

  • 1 pcs$4.87389
  • 25 pcs$4.84964

Nimewo Pati:
IXTK200N10P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 100V 200A TO-264.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXTK200N10P electronic components. IXTK200N10P can be shipped within 24 hours after order. If you have any demands for IXTK200N10P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTK200N10P Atribi pwodwi yo

Nimewo Pati : IXTK200N10P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 100V 200A TO-264
Seri : PolarHT™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 200A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 7.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 5V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs : 240nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 7600pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 800W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-264 (IXTK)
Pake / Ka : TO-264-3, TO-264AA