Infineon Technologies - IPD30N08S222ATMA1

KEY Part #: K6420112

IPD30N08S222ATMA1 Pricing (USD) [161638PC Stock]

  • 1 pcs$0.22883
  • 2,500 pcs$0.21792

Nimewo Pati:
IPD30N08S222ATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 75V 30A TO252-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single and Diodes - Zener - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD30N08S222ATMA1 Atribi pwodwi yo

Nimewo Pati : IPD30N08S222ATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 75V 30A TO252-3
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 21.5 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 4V @ 80µA
Chaje Gate (Qg) (Max) @ Vgs : 57nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1400pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 136W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TO252-3
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63